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w25q40bw publication release date: october 11 , 201 3 - 1 - revision f 1.8v 4 m - bit serial flash memory with dual and quad spi
w25q40bw - 2 - table of contents 1. general description ................................ ................................ ................................ ............... 5 2. features ................................ ................................ ................................ ................................ ....... 5 3. pin configuration so ic/vsop 150 - mil ................................ ................................ ................. 6 4. pad configuration ws on 6x5 - mm, uson 2x3 - mm ................................ ............................. 6 5. pin description soic /vsop 150 - mil, wson 6x5 - mm & uson 2x3 - mm ............................. 6 5.1 package types ................................ ................................ ................................ ..................... 7 5 .2 chip select (/cs) ................................ ................................ ................................ .................. 7 5.3 serial data input, output and ios (di, do and io0, io1, io2, io3) ................................ .... 7 5.4 write protect (/wp) ................................ ................................ ................................ ............... 7 5.5 hold (/hold) ................................ ................................ ................................ ..................... 7 5.6 serial clock (clk) ................................ ................................ ................................ ................ 7 6. block diagram ................................ ................................ ................................ ............................ 8 7. functional descripti on ................................ ................................ ................................ ......... 9 7.1 spi operations ................................ ................................ ................................ ............... 9 7.1.1 standard spi inst ructions ................................ ................................ ................................ ....... 9 7.1.2 dual spi instructions ................................ ................................ ................................ .............. 9 7.1.3 quad spi instructions ................................ ................................ ................................ ............ 9 7.1.4 hold function ................................ ................................ ................................ ......................... 9 7.2 write protection ................................ ................................ ................................ ....... 10 7.2.1 write protect features ................................ ................................ ................................ ......... 10 8. control and status r egisters ................................ ................................ ........................ 11 8.1 status register ................................ ................................ ................................ .......... 11 8.1.1 busy ................................ ................................ ................................ ................................ ... 11 8.1.2 write enable latch (wel) ................................ ................................ ................................ .... 11 8.1.3 block protect bits (bp2, bp1, bp0) ................................ ................................ ...................... 11 8.1.4 top/bottom bloc k protect (tb) ................................ ................................ ............................. 11 8.1.5 sector/block protect (sec) ................................ ................................ ................................ .. 11 8.1.6 complement protect (cmp) ................................ ................................ ................................ . 12 8.1.7 status register protect (srp 1, srp0 ) ................................ ................................ ................ 12 8.1.8 erase/program suspend status (sus) ................................ ................................ ................ 12 8.1.9 security register lock bits (lb3, lb2, lb1, lb0) ................................ ................................ 12 8.1.10 quad enable ( qe ) ................................ ................................ ................................ .............. 13 8.1.11 status register memory protection (cmp = 0) ................................ ................................ ... 14 8.1.12 status register memory protection (cmp = 1) ................................ ................................ ... 15 8.2 instructions ................................ ................................ ................................ ................. 16 8.2.1 manufacturer and device identification ................................ ................................ ................ 16 8.2.2 instruction set table 1 (erase, program instructions) ( 1 ) ................................ ....................... 17
w25q40bw publication release date: october 11 , 201 3 - 3 - revision f 8.2.3 i nstruction set table 2 (read instructions) ................................ ................................ .......... 18 8.2.4 instruction set table 3 (id, security instructions) ................................ ................................ 19 8.2.5 write enable (0 6h) ................................ ................................ ................................ ............... 20 8.2.6 write enable for volatile status register (50h) ................................ ................................ .... 20 8.2.7 write disable (04h) ................................ ................................ ................................ ............... 21 8.2.8 read status register - 1 (05h) and read status register - 2 ( 3 5h) ................................ ......... 22 8.2.9 write status register (01h) ................................ ................................ ................................ .. 22 8.2.10 read data (03h) ................................ ................................ ................................ ................. 24 8.2.11 fast read (0bh) ................................ ................................ ................................ ................. 25 8.2.12 fast read dual output (3bh) ................................ ................................ ............................. 26 8.2.13 fast read quad output (6bh) ................................ ................................ ............................ 27 8.2.14 f ast read dual i/o (bbh) ................................ ................................ ................................ ... 28 8.2.15 fast read qua d i/o (ebh) ................................ ................................ ................................ . 30 8.2.16 word read quad i/o (e7h) ................................ ................................ ................................ 32 8.2.17 octal word read quad i/o (e3h) ................................ ................................ ....................... 34 8.2.18 set burst with wrap (77h) ................................ ................................ ................................ .. 36 8.2.19 continuous read mode bits (m7 - 0) ................................ ................................ ................... 37 8.2.20 continuous read mode reset (ffh or ffffh) ................................ ................................ .. 37 8.2.21 page program (02h) ................................ ................................ ................................ ........... 38 8.2.22 quad input page program ( 3 2h) ................................ ................................ ........................ 39 8.2.23 sector erase (20h) ................................ ................................ ................................ ............. 40 8.2.24 32kb block erase (52h) ................................ ................................ ................................ ..... 41 8.2.25 64kb block erase (d8h) ................................ ................................ ................................ ..... 42 8.2.26 chip erase (c7h / 60h ) ................................ ................................ ................................ ....... 43 8.2.27 erase / program suspend (75h) ................................ ................................ ......................... 44 8.2.28 erase / program resume (7ah) ................................ ................................ ......................... 45 8.2.29 power - down (b9h) ................................ ................................ ................................ .............. 46 8.2.30 release power - down / device id (abh) ................................ ................................ ............. 47 8.2.31 read manufacturer / device id (90h) ................................ ................................ ................. 49 8.2.32 read manufacturer / device id dual i/o (92h) ................................ ................................ ... 50 8.2.33 read manufacturer / device id quad i/o (94h) ................................ ................................ . 51 8.2.34 read unique id number (4bh) ................................ ................................ .......................... 52 8. 2.35 read jedec id (9fh) ................................ ................................ ................................ ........ 53 8.2.36 erase security registers (44h) ................................ ................................ ........................... 54 8.2.37 program security registers (42h) ................................ ................................ ...................... 55 8.2.38 read security registers (48h) ................................ ................................ ........................... 56 9. electrical character istics ................................ ................................ .............................. 57 9.1 abs olute maximum ratings (1) ................................ ................................ .......................... 57 9.2 operating ranges ................................ ................................ ................................ .............. 57 9.3 power - up power - down timing and requirements ................................ ........................... 58
w25q40bw - 4 - 9.4 dc electrical characteristics ................................ ................................ .............................. 59 9.5 ac measurement conditions ................................ ................................ ............................. 60 9.6 ac electrical characteristics ................................ ................................ .............................. 61 9.7 ac electrical characteristics (contd) ................................ ................................ ................. 62 9.8 serial output timing ................................ ................................ ................................ ........... 63 9.9 serial input timing ................................ ................................ ................................ .............. 63 9.10 hold timing ................................ ................................ ................................ ...................... 63 9.11 wp timing ................................ ................................ ................................ .......................... 63 10. package spec ification ................................ ................................ ................................ .......... 64 10.1 8 - pin soic 150 - mil (package code sn) ................................ ................................ ........... 64 10.2 8 - pin vsop 150 - mil (package code sv) ................................ ................................ .......... 65 10.3 8 - pad wson 6x5mm (package code zp) ................................ ................................ ........ 66 10.4 8 - pad uson 2x3 - mm (package code ux , w25q40bwuxig ) ................................ ........ 69 10.5 8 - pad uson 2x3 x0.6 - mm ^ 3 (package code ux , w25q40bwuxie ) ............................... 70 10.6 ordering information ................................ ................................ ................................ .......... 71 10.7 valid part numbers and top side marking ................................ ................................ ........ 72 11. revision history ................................ ................................ ................................ ...................... 73
w25q40bw publication release date: october 11 , 201 3 - 5 - revision f 1. general description the w25q40bw ( 4m - bit) serial flash memory p rovide s a storage solution for systems with limited space, pins and power. the 25 q series offers flexibility and performance well beyond ordinary serial flash devices. they are ideal for code shadowing to ram, executing code directly from d ua l/quad spi (xi p ) and storing voice, text and data. the device operate s on a single 1.65v to 1.95 v power supply with current consumption as low as 4ma active and 1a for power - down. all devices are of fered in space - saving packages. the w25q40bw array is organized into 2 , 0 48 programmable pages of 256 - bytes each. up to 256 bytes can be programmed at a time. pages can be erased in groups of 16 ( 4kb sector erase), groups of 128 (32kb block erase), groups of 256 ( 64kb block erase) or the entire chip (chip erase). the w25q40bw has 128 erasable sectors and 8 erasable blocks respectively. the small 4kb sectors allow for greater flexibility in applications that require data and parameter storage. (see figure 2.) the w25q40bw supports the standard serial peripheral interface (spi), and a high performance d ual /quad output as well as dual/quad i/o spi: serial clock, chip select, serial data i/o 0 (di), i/o1 (do), i/o2 (/wp), and i/o3 (/hold) . spi clock frequencies of up to 80 mhz are supported allowing equivalent clock rates of 160 mhz ( 80 mhz x 2) for dual i/o and 320 mhz ( 80 mhz x 4 ) for quad i/o when using the fast read dual /quad i/o instruction s . these transfer rates can outperform standard asynchronous 8 and 16 - bit parallel flash memories. the continuous read mode allows for efficient m emory access with as few as 8 - clocks of instruction - overhead to read a 24 - bit address, allowing true xip ( execute in place) operation. a hold pin, write protect pin and programmable write protect ion , with top, bottom or complement array control, provide fu rther control flexibility. additionally, the device supports jedec standard manufacturer and device identification with a 64 - bit unique serial number . 2. features ? family of spiflash memories C w25q40bw : 4m - bit/ 512k - byte ( 524 , 288 ) C 256 - byte per programmable p age C standard spi: clk, /cs, di, do, /wp, /hold C dual spi: clk, /cs, io 0 , io 1 , /wp, /hold C quad spi: clk, /cs, io 0 , io 1 , io 2 , io 3 ? highest performance serial flash C 80 mhz dual/ quad spi clocks C 160 / 320 mhz equivalent dual/quad spi C 4 0mb/s continuous da ta transfer rate C up to 6 x that of ordinary serial flash C more than 100,000 erase/program cycles C more than 20 - year data retention ? efficient continuous read mode C low instruction overhead C continuous read with 8/16/32/64 - byte wrap C as few as 8 cl ocks to address memory C allows true xip ( execute in place) operation C outperforms x16 parallel flash note 1: contact winbond for details ? low power, wide temperature range C single 1.65 to 1.95 v supply C 4 ma active current, < 1a power - down current C - 40 c to +85c operating range ? flexible architecture with 4kb sectors C uniform sector erase (4k - bytes) C uniform block erase (32k and 64k - byte s ) C program one to 256 bytes C erase/program s uspend & resume ? advanced security features C software and hardware wr ite - protect C top/ bottom, 4kb complement array prot ection C lock - down and otp array protection (1) C 64 - bit unique serial number for each device C 4x 256 - byte security registers with otp lock s C volatile & non - volatile status register bits ? space efficient pa ckaging C 8 - pin soic /vsop 150 - mil C 8 - pin soic 20 8 - mil C 8 - pad wson 6x5 - mm , uson 2x3 - mm C contact winbond for kgd and other options
w25q40bw - 6 - 3. pin configu ration soic /vsop 150 - mil , soic 208 - mil figure 1 a. w25q40bw pin a ssignments, 8 - pin soic 150 - mil /208 - mil , vsop 150 - mil (package code sn & sv ) 4. pad configuration ws on 6x5 - mm , uson 2x3 - mm figure 1 b. w25q40bw pad assignments, 8 - pad wson 6x5 - mm , uson 2x3 - mm (package code zp & ux ) 5. pin description soic /vsop 150 - mil , soic 208 - mil , wson 6x5 - mm & uson 2x3 - mm pin no. pin n ame i/o function 1 /cs i chip select input 2 do ( io1 ) i/ o data output ( data input output 1)* 1 3 /wp ( io2 ) i /o write protect input ( data input output 2)* 2 4 gnd ground 5 di ( io0 ) i/o data i nput ( data input output 0)* 1 6 clk i serial clock input 7 / hold ( io3 ) i /o hold input ( data input output 3)* 2 8 vcc power supply *1 io0 and io1 are used for standard and dual spi instructions *2 io0 C io3 are used for quad spi instructions 1 2 3 4 8 7 6 5 /cs do (io 1 ) /wp (io 2 ) gnd vcc /hold (io 3 ) di (io 0 ) clk top view 1 2 3 4 /cs do (io 1 ) /wp (io 2 ) gnd vcc /hold (io 3 ) di (io 0 ) clk top view 8 7 6 5
w25q40bw publication release date: october 11 , 201 3 - 7 - revision f 5.1 package types w25q40bw is offered in an 8 - pin plastic 150 - mil width soic (package code sn ) , 8 - pin plastic 208 - mil width soic (package code s s ) , 8 - pin plastic 150 - mil width vsop (package code sv), 6x5 - mm wson ( package code zp) and 2x3 - mm uson (package code ux) as shown in figure 1a, and 1b, respectively. package diagrams and dim ensions are illustrated at the end of this datasheet. 5.2 chip select ( /cs ) the spi chip select ( /cs ) pin enables and disables device operation. when /cs is high the device is deselected and the serial data output ( do, or io0, io1, io2, i o3 ) pin s are at high i mpedance. when deselected, the devices power consumption will be at standby levels unless an internal erase, program or write status register cycle is in progress. when /cs is brought low the device will be selected, power consumption will increase to acti ve levels and instructions can be written to and data read from the device. after power - up, /cs must transition from high to low before a new instruction will be accepted. the /cs input must track the vcc supply level at power - up (see write protection an d figure 3 7 ). if needed a pull - up resister on /cs can be used to accomplish this. 5.3 serial data input, output and ios (d i , d o and io0, io1, io2, io3) the w25q40bw support s standard spi, dual spi and quad spi operation. standard spi instructions use the unid irectional d i (input) pin to serially write instructions, addresses or data to the device on the rising edge of the serial clock (clk) input pin. standard spi also uses the unidirectional do (output) to read data or status from the device on the falling ed ge of clk. dual and quad spi instruction s use the bidirectional io pins to serially write instructions, addresses or data to the device on the rising edge of clk and read data or status from the device on the falling edge of clk. quad spi instructions req uire the non - volatile quad enable bit (qe) in status register - 2 to be set. when qe=1 , the /wp pin becomes i o 2 and /hold pin becomes io3. 5.4 write protect ( /wp ) the write protect ( /wp ) pin can be used to prevent the status register from being written. used i n conjunction with the status registers block protect ( cmp, sec , tb, bp2, bp1 and bp0 ) bits and status register protect (srp) bits, a portion as small as 4kb sector or the entire memory array can be hardware protected. the /wp pin is active low. when the qe bit of status register - 2 is set for q uad i/ o, the /wp pin function is not available since this pin is used for i o 2 . see figure 1a - c for the pin c onfiguration of quad i/o operation . 5.5 h old ( /hold ) the /hold pin allows the device to be paused while it is ac tively selected. when /hold is brought low, while /cs is low, the do pin will be at high impedance and signals on the di and clk pins will be ignored (dont care). when /hold is brought high, device operation can resume. the /hold function can be useful wh en multiple devices are sharing the same spi signals. the /hold pin is active low. when the qe bit of status register - 2 is set for quad i/o, the /hold pin function is not available since this pin is used for io3. see figure 1a and 1b for the pin configurat ion of quad i/o operation. 5.6 serial clock (clk) the spi serial clock input (clk) pin provides the timing for serial input an d output operations. ("see spi operations")
w25q40bw - 8 - 6. block diagram figure 2 . w25q40bw serial flash memory block di agram 00ff00h 00ffffh ? block 0 (64kb) ? 000000h 0000ffh ? ? ? 03ff00h 03ffffh ? block 3 (64kb) ? 030000h 0300ffh 04ff00h 04ffffh ? block 4 (64kb) ? 040000h 0400ffh ? ? ? 07ff00h 07ffffh ? block 7 (64kb) ? 070000h 0700ffh column decode and 256 - byte page buffer beginning page address ending page address w25q40bw spi command & control logic byte address latch / counter status register write control logic page address latch / counter high voltage generators xx0f00h xx0fffh ? sector 0 (4kb) ? xx0000h xx00ffh xx1f00h xx1fffh ? sector 1 (4kb) ? xx1000h xx10ffh xx2f00h xx2fffh ? sector 2 (4kb) ? xx2000h xx20ffh ? ? ? xxdf00h xxdfffh ? sector 13 (4kb) ? xxd000h xxd0ffh xxef00h xxefffh ? sector 14 (4kb) ? xxe000h xxe0ffh xxff00h xxffffh ? sector 15 (4kb) ? xxf000h xxf0ffh block segmentation data write protect logic and row decode do (io 1 ) di (io 0 ) /cs clk /hold (io 3 ) /wp (io 2 ) 003000h 0030ffh 002000h 0020ffh 001000h 0010ffh 000000h 0000ffh security register 3 - 0 00ff00h 00ffffh ? block 0 (64kb) ? 000000h 0000ffh ? ? ? 03ff00h 03ffffh ? block 3 (64kb) ? 030000h 0300ffh 04ff00h 04ffffh ? block 4 (64kb) ? 040000h 0400ffh ? ? ? 07ff00h 07ffffh ? block 7 (64kb) ? 070000h 0700ffh column decode and 256 - byte page buffer beginning page address ending page address w25q40bw spi command & control logic byte address latch / counter status register write control logic page address latch / counter high voltage generators xx0f00h xx0fffh ? sector 0 (4kb) ? xx0000h xx00ffh xx1f00h xx1fffh ? sector 1 (4kb) ? xx1000h xx10ffh xx2f00h xx2fffh ? sector 2 (4kb) ? xx2000h xx20ffh ? ? ? xxdf00h xxdfffh ? sector 13 (4kb) ? xxd000h xxd0ffh xxef00h xxefffh ? sector 14 (4kb) ? xxe000h xxe0ffh xxff00h xxffffh ? sector 15 (4kb) ? xxf000h xxf0ffh block segmentation data write protect logic and row decode do (io 1 ) di (io 0 ) /cs clk /hold (io 3 ) /wp (io 2 ) 003000h 0030ffh 002000h 0020ffh 001000h 0010ffh 000000h 0000ffh security register 3 - 0
w25q40bw publication release date: october 11 , 201 3 - 9 - revision f 7. functional descripti on 7.1 spi operations 7.1.1 standard spi instructions the w25q40bw is accessed through an spi compatible bus consisting of four signals: serial clock (clk), chip select ( /cs ), serial data input ( di ) and serial data output (do). standard sp i instructions use the di input pin to serially write instructions, addresses or data to the device on the rising edge of clk . the do output pin is used to read data or status from the device on the falling edge clk. spi bus operation modes 0 (0,0) and 3 (1,1) are supported. the primary difference between mode 0 and mode 3 concerns the normal state of the clk signal when the spi bus master is in standby and data is not being transferred to the serial flash. for mode 0 the clk signal is normally low on the falling and rising edges of /cs. for mode 3 the clk signal is normally high on the falling and rising edges of /cs . 7.1.2 dual spi instructions the w25q40bw support s dual spi operation when using the fast read dual output (3bh) and fast read dual i/o (bbh) instruction s . th ese instructions allow data to be transferred to or from the device at two to three times the rate of ordinary serial flash devices. the dual spi read i nstruction s are ideal for quickly downloading code to ram upon power - up (code - shadowing ) or for execut ing non - speed - critical code directly from the spi bus (xip) . when using dual spi instructions , the di and do pins become bidirectional i/ o pins: io0 and io1. 7.1.3 quad spi instructions the w25q40bw supports quad spi operation whe n using the fast read quad output (6bh) , fast read quad i/o (ebh) , word read quad i/o (e7h) and octal word read quad i/o (e3h) instructions . these instructions allow data to be transferred to or from the device six to eight times the rate of ordinary serial flash. the quad read instructions offer a significant improvement in continuous and random access transfer rates allowing fast code - shadowing to ram or execut ion directly from the spi bus (xip) . when using quad spi instructions the di and do pins become bidirecti onal io0 and io1 , and the /wp and /hold pins become io2 and io3 respectively. quad spi instructions require the non - volatile quad enable bit (qe) in status register - 2 to be set . 7.1.4 hold function for standard spi and dual spi operations, t he /hold signal allow s the w25q40bw operation to be paused while it is actively selected (when /cs is low). the /hold function may be useful in cases where the spi data and clock signals are shared with other devices. for example, consider if the page buffer was only partially written when a priority interrupt requires use of the spi bus. in this case the /hold function can save the state of the instruction and the data in the buffer so programming can resume where it left off once the bus is available again. the /hold function is only available for standard spi and dual spi operation, not during quad spi. to initiate a /hold condition, the device must be selected with /cs low. a /hold condition will activate on the falling edge of the /hold signal if the clk signal is already l ow. if the clk is not already low the /hold condition will activate after the next falling edge of clk. the /hold condition will terminate on the
w25q40bw - 10 - rising edge of the /hold signal if the clk signal is already low. if the clk is not already low the /hold cond ition will terminate after the next falling edge of clk. during a /hold condition, the serial data output (do) is high impedance, a nd serial data input (di ) and serial clock (clk) are ignored. the chip select ( /cs ) signal should be kept active low for the full duration of the /hold operation to avoid resetting the internal logic state of the device. 7.2 write protection applications that use non - volatile memory must take into consideration the possibility of noise and other adverse system conditions that may co mpromise data integrity. to address this concern , the w25q40bw provides several means to protect the data from inadvertent writes. 7.2.1 write protect features ? device resets when vcc is below threshold ? time delay write disable after power - up ? write enable/disable instructions and a ut omatic write disable after e rase or program ? software and hardware (/wp pin) write protection using status register ? write protection using power - down instruction ? lock down write protection until next power - up ? one time program (otp) wr ite protection * * note : this feature is available upon special order. please contact winbond for details. upon power - up or at power - down , the w25q40bw will maintain a reset condition while vcc is below the threshold value of v wi , (see power - up timing and voltage levels and figure 3 7 ). while reset, all operations are disabled and no instructions are recognized. during power - up and after the vcc voltage exceeds v wi , all program and erase related instructions are further disabled for a time delay of t puw . th is includes the write enable, page program, sector erase, block erase, chip erase and the write status register instructions. note that the chip select pin ( /cs ) must track the vcc supply level at power - up until the vcc - min level and t vsl time delay is rea ched. if needed a pull - up resister on /cs can be used to accomplish this. after power - up the device is automatically placed in a write - disabled state with the status register write enable latch (wel) set to a 0. a write enable instruction must be issued b efore a page program, sector erase, block erase, chip erase or write status register instruction will be accepted. after completing a program, erase or write instruction the write enable latch (wel) is automatically cleared to a write - disabled state of 0. software controlled write protection is facilitated using the write status register instruction and setting the status register protect (srp 0, srp1 ) and block protect ( cmp, sec, tb, bp2, bp1 and bp0 ) bits. these settings allow a portion as small as 4kb sect or or the entire memory array to be configured as read only. used in conjunction with the write protect ( /wp ) pin, changes to the status register can be enabled or disabled under hardware control. see status register section for further information. additi onally, the power - down instruction offers an extra level of write protection as all instructions are ignored except for the release power - down instruction.
w25q40bw publication release date: october 11 , 201 3 - 11 - revision f 8. control and status r egisters the read status register - 1 and status register - 2 instruction s can be u sed to provide status on the availability of the flash memory array, if the device is write enabled or disabled, t he state of write protection , quad spi s e tting , security register lock status and erase/program suspend status . the write status register inst ruction can be used to configure the device write protection features , quad spi sett i ng and security register otp lock . write access to the status register is controlled by the state of the non - volatile s tatus register protect bits (srp 0, srp1 ) , the write enable instruction, and during standard/dual spi operations, the /wp pin . 8.1 status register 8.1.1 busy busy is a read only bit in the status register (s0) that is set to a 1 state when the device is executing a page program, quad page program, sector erase, bloc k erase, chip erase, write status register or erase/program security register instruction. during this time the device will ignore further instructions except for the read status register and erase /program suspend instruction (see t w , t pp , t se , t b e , and t c e in ac characteristics). when the program, erase or write status /security register instruction has completed, the busy bit will be cleared to a 0 state indicating the device is ready for further instructions. 8.1.2 write enable latch (wel) write enable latch ( wel) is a read only bit in the statu s register (s1) that is set to 1 after executing a write enable instruction. th e wel status bit is cleared to 0 when the device is write disabled. a write disable state occurs upon power - up or after any of the following instructions: write disable, page program, quad page program, sector erase, block erase, chip erase, write status register , erase security register and program security register . 8.1.3 block protect bits (bp2, bp1, bp0) the block protect bits (bp2, bp1, bp0 ) are non - volatile read/write bits in the status register (s4, s3, and s2 ) that provide write protection control and status. block protect bits can be set using the write status register instruction (see t w in ac characteristics). all, none or a portion of the memory array can be protected from program and erase instructions (see status register memory protection table). the factory default setting for the block protection bits is 0, none of the array protected. 8.1.4 top/bottom block protect (tb) the non - volatile to p/bottom bit (tb) controls if the block protect bits (bp2, bp1, bp0) protect from the top (tb=0) or the bottom (tb=1) of the array as shown in the status register memory protection table. the f actory default setting is tb=0. the tb bit can be set with the write status register instruction depending on the state of the srp0, srp1 and wel bits. 8.1.5 sector /block protect (sec) the non - volatile sector /block p rotect bit (sec) controls if the block protect bits (bp2, bp1, bp0) protect either 4kb sectors (sec=1) or 6 4kb blocks (sec=0) in the top (tb=0) or the bottom (tb=1) of the array as shown in the status register memory protection table. the default setting is sec =0.
w25q40bw - 12 - 8.1.6 complement protect (cmp) the c omplement p rotect bit (cmp) is a non - volatile read/write bit in the status register (s14). it is used in conjunction with sec, tb, bp2, bp1 and bp0 bits to provide more flexibility for the array protection. once cmp is set to 1, previous array protection set by sec, tb, bp2, bp1 and bp0 will be reversed. for instance, whe n cmp=0, a top 4kb sector can be protected while the rest of the array is not; when cmp=1, the top 4kb sector will become unprotected while the rest of the array become read - only. please refer to the status register memory protection table for details. the default setting is cmp =0. 8.1.7 status register protect (srp 1 , srp 0 ) the status register protect bits (srp 1 and srp0 ) are non - volatile read/write bits in the status register (s8 and s7). the srp bits control the method of write protection: s oftware p rotection, h ardware p rotection, p ower s upply l ock - d own or o ne t ime p rogrammable (otp) p rotection. srp1 srp0 /wp status register description 0 0 x software protection /wp pin has no control. the status register can be written to after a write enable instruction , wel =1 . [factory default] 0 1 0 hardware protect ed when /wp pin is low the status register locked and can not be written to . 0 1 1 hardware unprotected when /wp pin is high the status register is unlocked and can be written to after a write enable instruct ion , wel=1. 1 0 x power supply lock - down status register is protected and can not be written to again until the next power - down , power - up cycle . ( 1 ) 1 1 x one time program ( 2 ) status register is permanently protected and can not be written to. note: 1. when srp1, srp0 = (1, 0), a power - down, power - up cycle will change srp1, srp0 to (0, 0) state. 2 . this feature is available upon special order. please contact winbond for details. 8.1.8 erase/program suspend status (sus) the suspend status bit is a read only b it in the status register (s15) that is set to 1 after executing a erase/program suspend (75h) instruction. the sus status bit is cleared to 0 by erase/program resume (7ah) instr uction as well as a power - down, power - up cycle. 8.1.9 security register lock bits (l b3, lb2, lb1 , lb0) the security register lock bits (lb3, lb2, lb1, lb0) are non - volatile one time program (otp) bits in status register (s13, s12, s11, s10) that provide the write protect control and status to the security registers . the default state of l b3 - 0 is 0, security registers are unlocked. lb3 - 0 can be set to 1 individually using the write status register instruction. lb3 - 0 are one time programmable (otp), once its set to 1, the corresponding 256 - byte security register will become read - only perman ently.
w25q40bw publication release date: october 11 , 201 3 - 13 - revision f 8.1.10 quad enable ( qe ) the quad enable (qe ) bit is a non - volatile read/write bit in the status register (s 9 ) that allow s quad spi operation . when the qe bit is set to a 0 state (factory default) , the /wp pin and /h old are enabled . when the qe bit is set t o a 1 , the quad io2 and i o3 pins are enabled. warning: the qe bit should never be set to a 1 during standard spi or dual spi operation if the /wp or /hold pins are tied directly to the power supply or ground. figure 3 a . status register - 1 figure 3 b . status register - 2 s7 s6 s5 s4 s3 s2 s1 s0 srp0 sec tb bp2 bp1 bp0 wel busy status register protect 0 (non - volatile) sector protect (non - volatile) top/bottom protect (non - volatile) block protect bits (non - volatile) write enable latch erase/write in progress s7 s6 s5 s4 s3 s2 s1 s0 srp0 sec tb bp2 bp1 bp0 wel busy status register protect 0 (non - volatile) sector protect (non - volatile) top/bottom protect (non - volatile) block protect bits (non - volatile) write enable latch erase/write in progress s15 s14 s13 s12 s11 s10 s9 s8 sus cmp lb3 lb2 lb1 lb0 qe srp1 suspend status complement protect (non - volatile) security register lock bits (non - volatile otp) quad enable (non - volatile) status register protect 1 (non - volatile) s15 s14 s13 s12 s11 s10 s9 s8 sus cmp lb3 lb2 lb1 lb0 qe srp1 suspend status complement protect (non - volatile) security register lock bits (non - volatile otp) quad enable (non - volatile) status register protect 1 (non - volatile)
w25q40bw - 14 - 8.1.11 status register memory protection (cmp = 0) status register (1) w25q40bw ( 4m - bit) memory protecti on sec tb bp2 bp1 bp0 block(s) addresses density portion x x 0 0 0 none none none none 0 0 0 0 1 7 0 7 000 0h C 0 7 ffffh 64kb upper 1/ 8 0 0 0 1 0 6 and 7 0 6 0000h C 0 7 ffffh 128kb upper 1/ 4 0 0 0 1 1 4 thru 7 0 4 0000h C 0 7 ffffh 256kb upper 1/ 2 0 1 0 0 1 0 000000h C 00ffffh 64kb lower 1/ 8 0 1 0 1 0 0 and 1 000000h C 01ffffh 128kb lower 1/ 4 0 1 0 1 1 0 thru 3 00 0000h C 03ffffh 256kb lower 1/ 2 0 x 1 x x 0 thru 7 000000h C 0 7 ffffh 512k b all 1 0 0 0 1 7 0 7 f000 h C 0 7 ffffh 4kb top block 1 0 0 1 0 7 0 7 e000 h C 0 7 ffffh 8kb top block 1 0 0 1 1 7 0 7 c000 h C 0 7 ffffh 16kb top block 1 0 1 0 x 7 0 7 8000 h C 0 7 ffffh 32kb top block 1 1 0 0 1 0 000000h C 000fffh 4kb bottom block 1 1 0 1 0 0 000000h C 001fffh 8kb bottom block 1 1 0 1 1 0 000000h C 003fffh 16kb bottom block 1 1 1 0 x 0 000000h C 007fffh 32kb bottom block 1 x 1 1 1 0 thru 7 000000h C 0 7f fffh 512k b all note: 1. x = dont care
w25q40bw publication release date: october 11 , 201 3 - 15 - revision f 8.1.12 status register memory protection (cmp = 1) status register (1) w25q40bw ( 4m - bit) memory protecti on sec tb bp2 bp1 bp0 block(s) addresses density portion x x 0 0 0 0 thru 7 000000h C 0 7 ffffh 512k b all 0 0 0 0 1 0 thru 6 0 0 0000h C 0 6 ffffh 448 kb lower 7 / 8 0 0 0 1 0 0 thru 5 0 0 0000h C 0 5 ffffh 384 kb low er 3 / 4 0 0 0 1 1 0 thru 3 0 0 0000h C 0 3 ffffh 256 kb low er 1 / 2 0 1 0 0 1 1 thru 7 010000h C 0 7 ffffh 448 kb upper 7 / 8 0 1 0 1 0 2 thru 7 020000h C 0 7 ffffh 384 kb upper 3 / 4 0 1 0 1 1 4 t hru 7 040000h C 0 7 ffffh 256 kb upper 1 / 2 0 x 1 x x none none none none 1 0 0 0 1 0 thru 7 0 00 000 h C 0 7 efffh 508 kb lower 127 / 128 1 0 0 1 0 0 thru 7 0 00 000 h C 0 7 dfffh 504 kb lower 63 / 64 1 0 0 1 1 0 thru 7 0 00 000 h C 0 7 bfffh 496 kb lower 31 / 32 1 0 1 0 x 0 t hru 7 0 00 000 h C 0 7 7fffh 480 kb lower 15 / 16 1 1 0 0 1 0 thru 7 00 1 000h C 0 7 f fffh 508 kb upper 127/128 1 1 0 1 0 0 thru 7 00 2 000h C 0 7 f fffh 504 kb upper 63/64 1 1 0 1 1 0 thru 7 00 4 000h C 0 7 f fffh 496 kb upper 31/32 1 1 1 0 x 0 thru 7 00 8 000h C 0 7 f fffh 480 kb upper 15/16 1 x 1 1 1 none none none none note: 1. x = dont care
w25q40bw - 16 - 8.2 instructions the instruction set of the w25q40bw consists of thirty f our basic instructions that are fully controlled through the spi bus (see instruction set table 1 - 3 ). instructions are initiated with the falling edge of chip select (/cs) . the first byte of data clo cked into the di input provides the i nstruction code. data on the di input is sampled on the rising edge of clock with most significant bit (msb) first. instructions vary in length from a single byte to several bytes and may be followed by address bytes, data bytes, dummy bytes (dont care), and in some cases, a combination. instructions are completed with the rising edge of edge /cs . clock relative timing diagrams for each in struction are included in figures 4 through 3 6 . all read instructions can be completed after any clocked bit. however, all instructions that write, program or erase must complete on a byte boundary ( / cs driven high after a full 8 - bits have been clocked) ot herwise the instruction will be ignor ed. this feature further protects the device from inadvertent writes. additionally, while the memory is being programmed or erased, or when the status register is being written, all instructions except for read status r egister will be ignored until the program or erase cycle has completed. 8.2.1 manufacturer and device identification manufacturer id (m f 7 - m f 0) winbond serial flash ef h device id (id7 - id0) (id15 - id0) instruction abh, 90h , 92h, 94h 9fh w25q40bw 1 2 h 5 01 3 h
w25q40bw publication release date: october 11 , 201 3 - 17 - revision f 8.2.2 instruction set table 1 (erase, program instructions) ( 1 ) instruction name byte 1 ( code ) byte 2 byte 3 byte 4 byte 5 byte 6 write enable 06h write enable for volatile status register 50h write disable 04h read status register - 1 05h (s7 C s0) ( 2 ) read status register - 2 35h (s 15 C s 8 ) ( 2 ) write status register 01h s7 C s0 s 15 - s8 page program 02h a23 C a16 a15 C a8 a7 C a0 d7 C d0 quad page program 3 2h a23 C a16 a15 C a8 a7 C a0 d7 C d0 , (3) sector erase (4kb) 20h a23 C a16 a15 C a8 a7 C a0 block erase (32kb) 5 2h a23 C a16 a15 C a8 a7 C a0 block erase (64kb) d8h a23 C a16 a15 C a8 a7 C a0 chip erase c7h /60h erase / program suspend 75h erase / program resume 7ah power - down b9h continuous read mode reset (4) ffh ffh notes: 1. data bytes are shifted with most sign ificant bit first. byte fields with data in parenthesis () indicate data being read from the device on the do pin. 2. the status register contents will repeat continuously until /cs terminates the instruction. 3. quad page program input data : io0 = d4, d0, io1 = d5, d1, io2 = d6, d2, io3 = d7, d3, 4. this instruction is recommended w hen using the dual or quad continuous read mode feature. see section 8 .2. 1 9 & 8 .2. 20 for more information.
w25q40bw - 18 - 8.2.3 instruction set t able 2 ( read instructions) instruction name byte 1 ( code ) byte 2 byte 3 byte 4 byte 5 byte 6 read data 03h a23 - a16 a15 - a8 a7 - a0 (d7 - d0) fast read 0bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0) fast read dual output 3bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0 , ) (1) fast read quad output 6bh a23 - a16 a15 - a8 a7 - a0 dummy (d7 - d0 , ) (3) fast read dual i/o bbh a23 - a 8 (2) a7 - a0, m7 - m0 (2) (d7 - d0 , ) (1) fast read quad i/o ebh a23 - a0, m7 - m0 (4) ( x,x,x,x, d7 - d0 , ) (5) (d7 - d0, ) (3) word read quad i/o (7) e7h a23 - a0, m7 - m0 (4) ( x,x, d7 - d0 , ) (6) (d7 - d0, ) (3) octal word read quad i/o (8) e3h a23 - a0, m7 - m0 (4) (d7 - d0, ) (3) set burst with wrap 77h xxxxxx , w 6 - w 4 (4) notes : 1 . dual output data io0 = (d6, d4, d2, d0) io1 = (d7, d5, d3, d1) 2 . dual input address io0 = a22, a20, a18, a16, a14, a12, a10, a8 a6, a4, a2, a0, m6, m4, m2, m0 io1 = a23, a21, a19, a17, a15, a13, a11, a9 a7, a5, a3, a1, m7, m5, m3, m1 3 . quad output data io0 = (d4, d0, ..) io1 = (d5, d1, ..) io2 = (d6, d2, ..) io3 = (d7, d3, ..) 4 . quad input addre ss set burst with wrap input io0 = a20, a16, a12, a8, a4, a0, m4, m0 io0 = x, x, x, x, x, x, w4, x io1 = a21, a17, a13, a9, a5, a1, m5, m1 io1 = x, x, x, x, x, x, w5, x io2 = a22, a18, a14, a10, a6, a2, m6, m2 io2 = x, x, x, x, x, x, w6, x io3 = a23, a19, a15, a11, a7, a3, m7, m3 io3 = x, x, x, x, x, x, x, x 5 . fast read quad i/o data io0 = (x, x, x, x, d4, d0, ..) io1 = (x, x, x, x, d5, d1, ..) io2 = (x, x, x, x, d6, d2, ..) io3 = (x, x, x, x, d7, d3, ..) 6. word read quad i/o data io0 = (x, x, d4, d0, ..) io1 = (x, x, d5, d1, ..) io2 = (x, x, d6, d2, ..) io3 = (x, x, d7, d3, ..) 7 . the lowest address bit must be 0. ( a0 = 0 ) 8. the lowest 4 address bits must be 0. ( a0, a1, a2, a3 = 0 )
w25q40bw publication release date: october 11 , 201 3 - 19 - revision f 8.2.4 instruction set table 3 (id, security instructions) instruction name byte 1 ( code ) byte 2 byte 3 byte 4 byte 5 byte 6 release power down / device id abh dummy dummy dummy (id7 - id0) (1) manufacturer/ device id ( 2 ) 90h dummy dummy 00h (mf7 - mf0) (id7 - id0) manufacturer/device id by dual i/o 92h a23 - a8 a7 - a0, m[7:0] (mf[7:0], id[7:0]) manufacture/device id by quad i/o 94h a23 - a0, m[7:0] xxxx, (mf[7:0], id[7:0]) (mf[7:0], id[7:0], ) jedec id 9fh (mf7 - mf0) manufacturer (id15 - id8) memory type (id7 - id0) ca pacity read unique id 4bh dummy dummy dummy dummy (id63 - id0) erase security registers (3) 44h a23 C a16 a15 C a8 a7 C a0 program security registers (3) 42h a23 C a16 a15 C a8 a7 C a0 d7 - d 0 d7 - d 0 read security registers (3) 48h a23 C a16 a15 C a8 a7 C a0 dummy (d7 - 0) notes: 1. the device id will repeat continuously until /cs terminates the instruction. 2. see manufacturer and device identification table for device id information. 3. security register address: security register 0: a23 - 16 = 00h ; a15 - 8 = 00h ; a7 - 0 = byte addre ss security register 1 : a23 - 16 = 00h ; a15 - 8 = 10h ; a7 - 0 = byte address security register 2 : a23 - 16 = 00h ; a15 - 8 = 20h ; a7 - 0 = byte address security register 3 : a23 - 16 = 00h ; a15 - 8 = 30h ; a7 - 0 = byte address please note that security register 0 is reserved by winbond for future use. it is recommended to use security registers 1 - 3 before using register 0 .
w25q40bw - 20 - 8.2.5 write enable (06 h) the write en able instruction (figure 4 ) sets the write enable latch (wel) bit in the status register to a 1. the wel bit must be set prior to every page program, quad page program, sector erase, block erase , chip erase, write status register and erase/program security registers instruction. the write enable instruction is entered by driving /cs low, shifting the instruction code 06h into the data input (di) pin on the rising edge of clk, and then driving /cs high. figure 4. write en able instruction sequence diagram 8.2.6 write enable for volatile status register (50h) t he non - volatile status register b it s described in section 8 .1 can also be written to as volatile bits. this gives more flexibility to change the system configuration and memory protection scheme s quickly without waiting for the typical non - volatile bit write cycles or affecting the endurance of the status register non - volatile bits. to write the volatile values into the status register bits, the write enable for volatile status register (50h) instruction must be issued prior to a write status register (01h) instruction. write enable for volat ile status register instruction (figure 5) will not set the write enable latch (wel) bit, it is only valid for the write status register instruction to change the volatile status register bit value s . figure 5. write enable for volatile status register instruction sequence diagram instruction (50h)
w25q40bw publication release date: october 11 , 201 3 - 21 - revision f 8.2.7 write disable (04 h) the write dis able instruction (figure 6 ) resets the write enable latch (wel) bit in the status register to a 0. the write disable instruction is entered by driving /cs low, shifting the instructio n code 04h into the di pin and then driving /cs high. note that the wel bit is automatically reset after power - up and upon completion of the write status register, erase/program security registers, page program, quad page program, sector e rase, block erase and chip erase instructions. write disable instruction can also be used to invalidate the write enable for volatile status register instruction. figure 6 . write dis able instruction sequence diagram
w25q40bw - 22 - 8.2.8 read statu s register - 1 (05h) and read status register - 2 ( 3 5h) the read status register instruction s allow the 8 - bit status register s to be read. the instruction is entered by driving /cs low and shifting the instruction code 05h for status r egister - 1 or 35h for status r egister - 2 into the di pin on the rising edge of clk. the status register bits are then shifted out on the do pin at the falling edge of clk with most significant bit (msb) first as shown in figure 7 . the status register bits are shown in figure 3 a and 3b and include the busy, wel, bp 2 - bp 0 , tb , sec, srp0, srp1 , qe , lb3 - 0, cmp and sus bits (see status register section earlier in this datasheet ). the read status register instruction may be used at any time, even while a program, erase or write status register cycle is in progress. this allows the busy status bit to be checked to determine when the cycle is complete and if the device can accept another instruction. the status register can be read continuously, as shown in figure 7 . the instruction is c ompleted by driving /cs high. figure 7 . read status register instruction sequence diagram 8.2.9 write status register (01h) the write status register instruction allows the status register to be written. only non - volatile status register bits srp0, sec, tb, b p2, bp1, bp0 (bits 7 thru 2 of status register - 1) and cmp, lb3, lb2, lb1, lb0, qe, srp1 (bits 14 thru 8 of status register - 2) can be written to. all other status register bit locations are read - only and will not be affected by the write status register ins truction. lb3 - 0 are non - volatile otp bits, once it is set to 1, it can not be cleared to 0. the status register bits are shown in figure 3 and described in 10.1 . to write non - volatile status register bits, a standard write enable (06h) instruction must pre viously have been executed for the device to accept the write status register instruction (status register bit wel must equal 1). once write enabled, the instruction is entered by driving /cs low, sending the instruction code 01h, and then writing the st atus register data b yte as illustrated in figure 8 . to write volatile status register bits, a write enable for volatile status register (50h) instruction must have been executed prior to the wr ite status register instruction (status register bit wel remain s 0). however, srp1 and lb3, lb2, lb1, lb0 can not be changed from 1 to 0 because of the otp protection for these bits. upon power off, the volatile status register bit values will be lost, and the non - volatile status register bit values will be restor ed when power on again.
w25q40bw publication release date: october 11 , 201 3 - 23 - revision f to complete the write status register instruction, t he /cs pin must be driven high after the eighth or sixteenth bit of data that is clocked in. if this is not done the write status register instruction will not be executed. if /cs is driven high after the eighth clock (compatible with the 25x series) the cmp, qe and srp1 bits will be cleared to 0. during non - volatile status register write operation (06h combined with 01h), a fter /cs is driven high, the self - timed write status regis ter cycle will commence for a time duration of t w (see ac characteristics). while the write status register cycle is in progress, the read status register instruction may still be accessed to check the status of the busy bit. the busy bit is a 1 during the write status register cycle and a 0 when the cycle is finished and ready to accept other instructions again. after the write status register cycle has finished , the write enable latch (wel) bit in the status register will be cleared to 0. during volatile status register write operation (50h combined with 01h), after /cs is driven high, the status register bits will be refreshed to the new values within the time period of t shs l2 (see ac characteristics). busy bit will remain 0 during the status register bit refresh period. please refer to 10 .1 for detailed status register bit descriptions . factory default for all status register bits are 0. figure 8 . write status register instruction sequence diagram 15 14 13 12 11 10 9 8 status register 1 status register 2 15 14 13 12 11 10 9 8 status register 1 status register 2 status register 2
w25q40bw - 24 - 8.2.10 read data (03h) the read dat a instruction allows one or more data bytes to be sequentially read from the memory. the instruction is initiated by driving the /cs pin low and then shifting the instruction code 03h followed by a 24 - b it address (a23 - a0) into the di pin. the code and a ddress bits are latched on the rising edge of the clk pin. after the address is received, the data byte of the addressed memory location will be shifted out on the do pin at the falling edge of clk with most significant bit (msb) first. the address is auto matically incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. this means that the entire memory can be accessed with a single instruction as long as the clock continues. the instruction is completed by driving /cs high. the read data instruction sequence is shown in figure 9 . if a read data instruction is issued while an erase, program or write cycle is in process (busy=1) the instruction is ignored and will not have any effects on the curr ent cycle. the read data instruction allows clock rates from d.c. to a maximum of f r (see ac electrical characteristics). figure 9 . read data instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 25 - revision f 8.2.11 fast read (0bh) the fast read instruction is similar to the read data instruction except that it can operate at the highest possible frequency of f r (see ac electrical characteristics). this is accomplished by adding eight dummy clocks after the 24 - bit address as shown in figure 10 . the dummy clocks allow th e devices internal circuits additional time for setting up the initial address. during the dummy clocks the data value on the d o pin is a dont care. figure 10 . fast read instruction sequence diagram
w25q40bw - 26 - 8.2.12 fast read dual output (3bh) the fast read dual o utput (3bh) instruction is similar to the standard fast read (0bh) instruction except th at data is output on two pins ; i o 0 and io 1 . this allows data to be transferred from the w25q40bw at twice the rate of standard spi devices. the fast read dual output in struction is ideal for quickly downloading code from flash to ram upon power - up or for applications that cache code - segments to ram for execution. similar to the fast read instruction, the fast read dual output instruction can operate at the highest possi ble frequency of f r (see ac electrical characteristics). this is accomplished by adding eight dummy clocks after the 24 - bit address as shown in figure 1 1 . the dummy clocks allow the device's internal circuits additional time for setting up the initial ad dress. the input data during the dummy clocks is dont care. however, the io 0 pin should be high - impedance prior to the falling edge of the first data out clock. figure 1 1 . fast read dual output instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 27 - revision f 8.2.13 fast read quad output (6bh) the fast read quad output (6bh) instruction is similar to the fast read dual output (3bh) instruction except that data is output on four pins, io 0 , io 1 , io 2 , and io 3 . a quad enable of status register - 2 must be executed before the device will accept the fast read quad output instruction (status register bit qe must equal 1 ) . the fast read quad output instruction allows data to be transferred from the w25q40bw at four times the rate of stan dard spi devices. t he fast read q ua d ou tput instruction can operate at the highest possible frequency of f r (see ac electrical characteristics). this is accomplished by adding eight dummy clocks after the 24 - bit address as shown in figure 1 2 . the dummy clocks allow the device's internal circu its additional time for setting up the initial address. the input data during the dummy clocks is dont care. however, the io pins should be high - impedance prior to the falling edge of the first data out clock. figure 1 2 . f ast read quad output instruction sequence diagram
w25q40bw - 28 - 8.2.14 f ast read dual i/o (bbh) the fast read dual i/o (bbh) instruction allows for improved random access while maintaining two io pins, io 0 and io 1 . it is similar to the fast read dual output (3bh) instructi on but with the capability to input the address bits (a23 - 0) two bits per clock. this reduced instruction overhead may allow for code execution (xip) directly from the d ua l spi in some applications. fast read dual i/o with continuous read mode the fast r ead dual i/o instruction can further reduce instruction overhead through setting the co ntinuous read mode b its (m7 - 0) after the input address bits (a23 - 0), as shown in figure 1 3 a . the upper nibble of the (m7 - 4) controls the length of the next fast read d ual i/o instruction through the inclusion or exclusion of the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the first data out clock. if th e continuous read mode bit s m 5 - 4 = (1, 0 ) , then the next fast read dual i/o instruction ( after /cs is raised and then lowered) does not require the bbh instruction code, as shown in figure 1 3 b. this reduces the instruction sequence by eight clocks and all ows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bit s m 5 - 4 do not equal to ( 1 ,0) , the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before issuing normal instructions (see 8 .2. 20 for detail descriptions). figure 1 3 a . fast read dual i / o instruction sequence ( initial i nstruction or previous m 5 - 4 ? 1 0 )
w25q40bw publication release date: october 11 , 201 3 - 29 - revision f figure 1 3 b . fast read dual i / o instruction sequence ( previous instruction set m 5 - 4 = 1 0 )
w25q40bw - 30 - 8.2.15 fast read quad i/o (ebh) the fast read quad i/o (ebh) instruction is similar to the fast read dual i/o (bbh) instructio n except that address and data bits are input and output through four pins io 0 , io 1 , io 2 and io 3 and four dummy clock are required prior to the data output . the quad i/o dramatically reduces instruction overhead allowing faster random access for code execu tion (xip) directly from the quad spi. the quad e nable bit (qe) of status register - 2 must be set to enable the fast r ead quad i/o instruction . fast read quad i/o with continuous read mode the fast read quad i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 1 4 a . the upper nibble of the (m7 - 4) controls the length of the next fast read quad i/o instruction through the inclusion or exclusion o f the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the first data out clock. if the continuous read mode bit s m 5 - 4 = (1, 0 ) , then the nex t fast read quad i/o instruction ( after /cs is raised and then lowered) does not require the ebh instruction code, as shown in figure 1 4 b. this reduces the instruction sequence by eight clocks and allows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bit s m 5 - 4 do not equal to ( 1 ,0) , the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instru ction can also be used to reset (m7 - 0) before issuing normal instructions (see 8 .2. 20 for detail descriptions). figure 1 4 a . fast read quad i / o instruction sequence ( initial instruction or previous m 5 - 4 ? 1 0 ) byte 1 byte 2 byte 1 byte 2
w25q40bw publication release date: october 11 , 201 3 - 31 - revision f figure 1 4 b . fast read quad i / o instruction sequence ( previous instruction set m 5 - 4 = 1 0 ) fast read quad i/o with 8/16/32/64 - byte wrap around the fast read quad i/o instruction can also be used to access a specific portion within a page by issui ng a set burst with wrap command prior to ebh . the set burst with wrap command can either enable or disable the wrap around feature for the following ebh comman ds . when wrap around is enabled, the data being accessed can be limited to either a 8, 16, 32 or 64 - byte section of a 256 - byte page. the output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/ 16/32/64 - byte section, the output will wrap around to the beginning boundary automatically until /cs is pulled high to terminate the command. the burst with wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64 - byte) of data without issuing multiple read commands. the set burst with wrap instruction allows three wrap bits, w6 - 4 to be set . the w4 bit is used to enable or disable the wrap around operatio n while w 6 - 5 are used to specify the length of the wrap around section within a page. see 8 .2.1 8 for detail descriptions.
w25q40bw - 32 - 8.2.16 word read quad i/o (e7h) the word read quad i/o (e 7 h) instruction is similar to the fast read quad i/o ( e bh) instruction except that the lowest a ddress bit (a0) must equal 0 and only two dummy clock are required prior to the data output . the quad i/o dramatically reduces instruction overhead allowing faster random access for code execution (xip) directly from the quad spi. the quad e na ble bit (qe) of status register - 2 must be set to enable the word r ead quad i/o instruction . word read quad i/o with continuous read mode the word read quad i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 1 5 a . the upper nibble of the (m7 - 4) controls the length of the next fast read quad i/o instruction through the inclusion or exclusion of the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the first data out clock. if the continuous read mode bits m5 - 4 = (1,0), then the next fast read quad i/o instruction ( after /cs is rais ed and then lowered) does not require the e7h instruction code, as shown in figure 1 5b. this reduces the instruction sequence by eight clocks and allows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bit s m5 - 4 do not equal to (1,0), the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before issui ng normal instructions (see 8 .2. 20 for detail descriptions). figure 1 5 a . word read quad i / o instruction sequence ( initial instruction or previous m 5 - 4 ? 10 ) instruction (e7h) byte 1 byte 2 byte 3 4 0 4 0 4 0 5 1 5 1 5 1 6 2 6 2 6 2 7 3 7 3 7 3 instruction (e7h) byte 1 byte 2 byte 3 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3
w25q40bw publication release date: october 11 , 201 3 - 33 - revision f figure 1 5 b . word read quad i / o instruction sequence ( previous instruction set m 5 - 4 = 1 0 ) word read quad i/o with 8/16/32/64 - byte wrap around the word read quad i/o instruction can also be used to access a specific portio n within a page by issuing a set burst with wrap command prior to e7h. the set burst with wrap command can either enable or disable the wrap around feature for the following e7h commands. when wrap around is enabled, the data being accessed can be limited to either a 8, 16, 32 or 64 - byte section of a 256 - byte page. the output data starts at the initial address specified in the instruction, once it reaches the ending boundary of the 8/16/32/64 - byte section, the output will wrap around to the beginnin g boundary automatically until /cs is pulled high to terminate the command. the burst with wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards within a fixed length (8/16/32/64 - byte) of da ta without issuing multiple read commands. the set burst with wrap instruction allows three wrap bits, w6 - 4 to be set. the w4 bit is used to enable or disable the wrap around operation while w 6 - 5 are used to specify the length of the wrap around sec tion within a page. see 8 .2.18 for detail descriptions. byte 1 byte 2 byte 3 4 0 4 0 4 0 5 1 5 1 5 1 6 2 6 2 6 2 7 3 7 3 7 3 byte 1 byte 2 byte 3 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3
w25q40bw - 34 - 8.2.17 octal word read quad i/o (e3h) the octal word read quad i/o (e3h) instruction is similar to the fast read quad i/o (ebh) instruction except that the lower four address bits (a0, a1 , a2, a3 ) must equ al 0. as a result, the dummy clocks are not required, which further reduces the instruction overhead allowing even faster random access for code execution (xip). the quad enable bit (qe) of status register - 2 must be se t to enable the octal word r ead quad i /o instruction. octal word read quad i/o with continuous read mode the octal word read quad i/o instruction can further reduce instruction overhead through setting the continuous read mode bits (m7 - 0) after the input address bits (a23 - 0), as shown in figure 1 6 a. the upper nibble of the (m7 - 4) controls the length of the next octal word read quad i/o instruction through the inclusion or exclusion of the first byte instruction code. the lower nibble bits of the (m3 - 0) are dont care (x). however, the io pins should be high - impedance prior to the falling edge of the first data out clock. if the continuous read mode bits m5 - 4 = (1,0), then the next fast read quad i/o instruction ( after /cs is raised and then lowered) does not require the e3h instruction code, as shown in figure 1 6b. this reduces the instruction sequence by eight clocks and allows the read address to be immediately entered after /cs is asserted low. if the continuous read mode bits m5 - 4 do not equal to (1,0), the next instruction ( after /cs is raised and then lowered) requires the first byte instruction code, thus returning to normal operation. a continuous read mode reset instruction can also be used to reset (m7 - 0) before issuing normal instructions (see 8 .2. 20 for detail descriptions ). figure 1 6 a. octal word read quad i/o instruction sequence ( initial instruction or previous m 5 - 4 ? 10 ) instruction (e3h) byte 1 byte 2 byte 3 4 0 4 0 4 0 5 1 5 1 5 1 6 2 6 2 6 2 7 3 7 3 7 3 4 0 5 1 6 2 7 3 byte 4 instruction (e3h) byte 1 byte 2 byte 3 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3 byte 4
w25q40bw publication release date: october 11 , 201 3 - 35 - revision f figure 1 6 b. octal word read quad i/o instruction sequence ( previous instruction set m 5 - 4 = 1 0 ) byte 2 byte 3 byte 4 4 0 4 0 4 0 5 1 5 1 5 1 6 2 6 2 6 2 7 3 7 3 7 3 byte 1 4 0 5 1 6 2 7 3 byte 2 byte 3 byte 4 4 0 4 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 7 3 7 3 byte 1 4 0 4 0 5 1 5 1 6 2 6 2 7 3 7 3
w25q40bw - 36 - 8.2.18 set burst with wrap (77h) the set burst with wrap (77h) instruction is used in conjun ction with fast read quad i/o and word read quad i/o instructions to access a fixed length of 8/16/32/64 - byte section within a 256 - byte page. certain applic ations can benefit from this feature and improve the overall system code execution performance. similar to a quad i/o instruction, the set burst with wrap instruction is initiated by driving the /cs pin low and then shifting the instruction code 77h foll owed by 24 dummy bit s and 8 wrap bits , w7 - 0 . the instruction sequence is shown in figure 17. wrap bit w7 and the lower nibble w3 - 0 are not used. w6, w5 w4 = 0 w4 =1 (default) wrap around wrap length wrap around wrap length 0 0 yes 8 - byte no n/a 0 1 yes 16 - byte no n/a 1 0 yes 32 - byte no n/a 1 1 yes 64 - byte no n/a once w6 - 4 is set by a set burst with wrap instruction, all the following fast read quad i/o and word read quad i/o instructions will use the w6 - 4 setting to access the 8/16/32/64 - b yte section within any page. to exit the wrap around function and return to normal read operation, another set burst with wrap instruction should be issued to set w4 = 1. the default value of w4 upon power on is 1. in the case of a system reset while w4 = 0, it is recommended that the controller issues a set burst with wrap instruction to reset w4 = 1 prior to any normal read instructions since w25q40bw does not have a hardware reset pin . figure 17. set burst with wrap instruc tion sequence 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 mode 3 mode 0 /cs clk io 0 io 1 io 2 io 3 instruction ( 77h ) don t care don t care don t care wrap bit x x x x x x x x x x x x x x x x x x x x x x x x x w6 w5 w4 x x x x 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 mode 3 mode 0 /cs clk io 0 io 1 io 2 io 3 instruction ( 77h ) don t care don t care don t care wrap bit x x x x x x x x x x x x x x x x x x x x x x x x x w6 w5 w4 x x x x x x x x x x x x x x x x x x x x x x x x x x x x x w6 w5 w4 x x x x
w25q40bw publication release date: october 11 , 201 3 - 37 - revision f 8.2.19 continuous read mode bits (m7 - 0) the continuous read mode bits are used in conjunction with fast read dual i/o, fast read quad i/o, word read quad i/o and octal word read quad i/o instructions to provide the highest random flash me mory access rate with minimum spi instruction overhead, thus allow true xip (execute in place) to be performed on serial flash devices. m7 - 0 need to be set by the dual/quad i/o read instructions. m 5 - 4 are used to control whether the 8 - bit spi instruction c ode (bbh, ebh, e7h or e3h) is needed or not for the next command. when m 5 - 4 = (1, 0 ) , the next command will be treated same as the current dual/quad i/o read command without needing the 8 - bit instruction code; when m 5 - 4 do not equal to (1,0) , the device ret urns to normal spi mode, all commands can be accepted. m7 - 6 and m3 - 0 are reserved bits for future use, either 0 or 1 values can be used. 8.2.20 continuous read mode reset (ffh or ffffh) continuous read mode reset instruction can be used to set m4 = 1, thus the de vice will release the continuous read mode and return to normal spi operation , as shown in figure 18. figure 1 8 . continuous read mode reset for fast read dual/quad i/o since w25q40bw does not have a hardware reset pin, so if t he controller resets while w25q40bw is set to continuous mode read, the w25q40bw will not recognize any initial standard spi instructions from the controller . to address this possibility, it is recommended to issue a continuous read mode reset instruction as the first instruction after a system reset. doing so will release the device from the continuous read mode and allow standard spi instructions to be recognized. to reset continuous read mode during quad i/o operation, only eight clocks are needed. the instruction is ffh. to reset continuous read mode during dual i/o operation, sixteen clocks are needed to shift in instruction ffffh. /cs mode bit reset for dual i/o mode 3 mode 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 mode 3 mode 0 mode bit reset for quad i/o ffh ffh don t care don t care don t care clk io 0 io 1 io 2 io 3 /cs mode bit reset for dual i/o mode 3 mode 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 mode 3 mode 0 mode bit reset for quad i/o ffh ffh don t care don t care don t care clk io 0 io 1 io 2 io 3
w25q40bw - 38 - 8.2.21 pa ge program (02h) the page program instruction allows from one byte to 256 bytes ( a page) of data to be programm ed at previously erased (ffh) memory locations. a write enable instruction must be executed before the device will accept the page program instruction (status register bit wel = 1). the instruction is initiated by driving the /cs pin low then shifting the i nstruction code 02h followed by a 24 - bit address (a23 - a0) and at l east one data byte, into the di pin. the /cs pin must be held low for the entire length of the instruction while data is being sent to the device. the page program instruction sequence is shown in figure 1 9 . if an entire 256 byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. if the last address byte is not zero, and the number of clocks exceed the remaining page length, the addres sing will wrap to the beginning of the page. in some cases, less than 256 bytes (a partial page) can be programmed without having any effect on other bytes within the same page. one condition to perform a partial page program is that the number of clocks c an not exceed the remaining page length. if more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously sent data. as with the write and erase instructions, the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the page program instruction will not be executed. after /cs is driven high, the self - timed page program instruction will commence for a time duration of tpp (see ac characteristics). w hile the page program cycle is in progress, the read status register instruction may still be accessed for checking the status of the busy bit. the busy bit is a 1 during the page program cycle and becomes a 0 when the cycle is finished and the device is r eady to accept other instructions again. after the page program cycle has finished the write enable latch (wel) bit in the status register is cleared to 0. the page program instruction will not be executed if the addressed page is protected by the block pr otect ( cmp, sec, tb, bp2, bp1, and bp0 ) bits . figure 1 9 . page program instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 39 - revision f 8.2.22 quad input page program ( 3 2h) the quad page program instruction allows up to 256 bytes of data to be programmed at previously erased (ffh) memory locations using four pins: io 0 , io 1 , io 2 , and io 3 . the quad page program can improve performance for prom programmer and applications that have slow clock speeds <5mhz. systems with faster clock speed will not realize much benefit for the quad page program instruction since the inherent page program time is much greater than the time it take to clock - in the data. to use quad page program the quad enable in status register - 2 must be set (qe=1). a write enable instruction must be execute d before the device will accept the quad page program instruction (status register - 1, wel=1). the instruction is initiated by driving the /cs pin low then shifting the instruction code 32h followed by a 24 - bit address (a23 - a0) and at least one data byte, into the io pins. the /cs pin must be held low for the entire length of the instruction while data is being sent to the device. all other functions of quad page program are identical to standard page program. the quad page program instruction sequence is shown in figure 20 . figure 20 . quad input page program instruction sequence diagram
w25q40bw - 40 - 8.2.23 sector erase (20h) the sector erase instruction sets all memory within a specified sector (4k - bytes) to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the sector erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code 20h followed a 24 - bit sector address (a23 - a0) (see figure 2). the sector erase instructi on sequence is shown in figure 2 1 . the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the sector erase instruction will not be execu ted. after /cs is driven high, the self - timed sector erase instruction will commence for a time duration of t se (see ac characteristics). while the sector erase cycle is in progress, the read status register instruction may still be accessed for checking t he status of the busy bit. the busy bit is a 1 during the sector erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. after the sector erase cycle has finished the write enable latch (wel) bit i n the status register is cleared to 0. the sector erase instruction will not be executed if the addressed page is protected by the block protect ( cmp, sec, tb, bp2, bp1, and bp0 ) bits (see status register memory protection table). figure 2 1 . sector erase instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 41 - revision f 8.2.24 32kb block erase (52h) the block erase instruction sets all memory within a specified block ( 32 k - bytes) to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the block erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code 52 h followed a 24 - bit block address (a23 - a0) (see figure 2). the block erase instructio n sequence is shown in figure 2 2 . the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the block erase instruction will not be executed. after /cs is driven high, the self - timed block erase instruction will commence for a time duration of t be 1 (see ac characteristics). while the block erase cycle is in progress, the read status register instruction may still be accessed for checking the status of the busy bit. the b usy bit is a 1 during the block erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. after the block erase cycle has finished the write enable latch (wel) bit in the status register is cleared t o 0. the block erase instruction will not be executed if the addressed page is protected by the block protect ( cmp, sec, tb, bp2, bp1, and bp0) bits (see status register memory protection table). figure 2 2 . 32kb block erase instruction sequence diagram
w25q40bw - 42 - 8.2.25 64kb block erase (d8h) the block erase instruction sets all memory within a specified block (64k - bytes) to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the block erase instruction (status r egister bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code d8h followed a 24 - bit block address (a23 - a0) (see figure 2). the block erase instructio n sequence is shown in figure 2 3 . the /cs pin must be driven high after the eighth bit of the last byte has been latched. if this is not done the block erase instruction will not be executed. after /cs is driven high, the self - timed block erase instruction will commence for a time duration of t be (see ac characteristics). while the block erase cycle is in progress, the read status register instruction may still be accessed for checking the status of the busy bit. the busy bit is a 1 during the block erase cycle and becomes a 0 when the cycle is finishe d and the device is ready to accept other instructions again. after the block erase cycle has finished the write enable latch (wel) bit in the status register is cleared to 0. the block erase instruction will not be executed if the addressed page is protec ted by the block protect ( cmp, sec, tb, bp2, bp1, and bp0 ) bits (see status register memory protection table). figure 2 3 . 64kb block erase instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 43 - revision f 8.2.26 chip erase (c7h / 60h ) the chip erase instruction sets all memory within the device to the erased state of all 1s (ffh). a write enable instruction must be executed before the device will accept the chip erase instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs p in low and shifting the instruction code c7h or 60h . the chip erase instructio n sequence is shown in figure 2 4 . the /cs pin must be driven high after the eighth bit has been latched. if this is not done the chip erase instruction will not be executed. after /cs is driven high, the self - timed chip erase instruction will commence for a time duration of t ce (see ac characteristics). while the chip erase cycle is in progress, the read status register instruction may still be accessed to check the status of the busy bit. the busy bit is a 1 during the chip erase cycle and becomes a 0 when finished and the device is ready to accept other instructions again. after the chip erase cycle has finished the write enable latch (wel) bit in the status register is clear ed to 0. the chip erase instruction will not be executed if any page is protected by the block protect ( cmp, sec, tb, bp2, bp1, and bp0 ) bits (see status register memory protection table). figure 2 4 . chip erase instruction sequ ence diagram
w25q40bw - 44 - 8.2.27 erase / program s uspend (75h) the erase/program suspend instruction 75h, allows the system to interrupt a sector or block erase operation or a page program operation and then read from or program/erase data to, any other sectors or blocks. the erase/program suspend instruction sequence is shown in figure 25. the write status register instruction (01h) and erase instructions (20h, 52h, d8h, c7h, 60h, 44h) are not allowed during erase suspend. erase suspend is valid only during the sector or b lock erase operation. if written during the chip erase operation, the erase suspend instruction is ignored. the write status register instruction (01h) and program instructions (02h, 32h, 42h) are not allowed during program suspend. program suspend is vali d only during the page program or quad page program operation. the erase/program suspend instruction 75h will be accepted by the device only if the sus bit in the status register equals to 0 and the busy bit equals to 1 while a sector or block erase or a page program operation is on - going. if the sus bit equals to 1 or the busy bit equals to 0, the suspend instruction will be ignored by the device. a maximum of time of t sus (see ac characteristics) is required to suspend the erase or program operation. the busy bit in the status register will be cleared from 1 to 0 within t sus and the sus bit in the status register will be set from 0 to 1 immediately after erase/program suspend. for a previously resumed erase/program operation, it is also required that the suspend instruction 75h is not issued earlier than a minimum of time of t sus following the preceding resume instruction 7ah. unexpected power off during the erase/program suspend state will reset the device and release the suspend state. sus bit in the status register will also reset to 0. the data within the page, sector or block that was being suspended may become corrupted. it is recommended for the user to implement system design techniques against the accidental power interruption and preser ve data integrity during erase/program suspend state. figure 2 5 . erase /program suspend instruction sequence
w25q40bw publication release date: october 11 , 201 3 - 45 - revision f 8.2.28 erase / program resume (7ah) the erase/program resume instruction 7ah must be written to resume the sector or blo ck erase operation or the page program operation after an erase/program suspend. the resume instruction 7ah will be accepted by the device only if the sus bit in the status register equals to 1 and the busy bit equals to 0. after issued the sus bit will be cleared from 1 to 0 immediately, the busy bit will be set from 0 to 1 within 200ns and the sector or block will complete the erase operation or the page will complete the program operation. if the sus bit equals to 0 or the busy bit equals to 1, the res ume instruction 7ah will be ignored by the device. the erase/program resume instruction sequence is shown in figure 26. resume instruction is ignored if the previous erase/program suspend operation was interrupted by unexpected power off. it is also requ ired that a subsequent erase/program suspend instruction not to be issued within a minimum of time of t sus following a previous resume instruction. figure 2 6 . erase /program resume instruction sequence
w25q40bw - 46 - 8.2.29 power - down (b9h) altho ugh the standby current during normal operation is relatively low, standby current can be further reduced with the power - down instruction. the lower power consumption makes the power - down instruction especially useful for battery powered applications (see icc1 and icc2 in ac characteristics). the instruction is initiated by driving the /cs pin low and shifting the instruction code b9h as shown in figure 2 7 . the /cs pin must be driven high after the eighth bit has been latched. if this is not done the pow er - down instruction will not be executed. after /cs is driven high, the power - down state will entered within the time duration of t dp (see ac characteristics). while in the power - down state only the release from power - down / device id instruction, which re stores the device to normal operation, will be recognized. all other instructions are ignored. this includes the read status register instruction, which is always available during normal operation. ignoring all but one instruction makes the power down stat e a useful condition for securing maximum write protection. the device always powers - up in the normal operation with the standby current of icc1. figure 2 7 . deep power - down instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 47 - revision f 8.2.30 release power - down / device id (abh) the release from power - down / device id instruction is a multi - purpose instruction. it can be used to release the d evice from the power - down state , or obtain the devices electronic ident ification (id) number . to release the device from t he power - down state, the instruction is issued by driving the /cs pin low, shifting the instruction code abh and driving /cs high as shown in figure 2 8 a . release from power - down will take the time duration of t res 1 (see ac characteristics) before the dev ice will resume normal operation and other instructions are accepted. the /cs pin must remain high during the t res 1 time duration. when used only to obtain the device id while not in the power - down state, the instruction is initiated by driving the /cs pin low and shifting the instruction code abh followed by 3 - dummy bytes. the device id bits are then shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 2 8 a . the d evice id values for the w25q40bw is listed in manu facturer and device identification table. the device id can be read continuously. the instruction is completed by driving /cs high. when used to release the device from the power - down state and obtain the device id, the instruction is the same as previous ly described, and shown in figure 2 8 b , except that after /cs is driven high it must remain high for a time duration of t res 2 (see ac characteristics). after this time duration the device will resume normal operation and other instructions will be accepted. if the release from power - down / device id instruction is issued while an erase, program or write cycle is in process (when busy equals 1) the instruction is ignored and will not have any effects on the current cycle . figure 2 8 a . release power - down instruction sequence
w25q40bw - 48 - figure 2 8 b . release power - down / device id instruction sequence diagram
w25q40bw publication release date: october 11 , 201 3 - 49 - revision f 8.2.31 read manufacturer / device id (90h) the read manufacturer/device id instruction is an alternative to the r elease from power - down / device id instruction that provides both the jedec assigned manufacturer id and the specific device id. the read manufacturer/device id instruction is very similar to the release from power - down / device id instruction. the instru ction is initiated by driving the /cs pin low and shifting the instruction code 90h followed by a 24 - bit address (a23 - a0) of 000000h. after which, the manufacturer id for winbond (efh) and the device id are shifted out on the falling edge of clk with mos t significant bit ( msb) first as shown in figure 29 . the device id values fo r the w25q40bw is listed in manufacturer and device identification table. if the 24 - bit address is initially set to 000001h the device id will be read first and then followed by th e manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving /cs high. figure 29 . read manufacturer / device id diagram
w25q40bw - 50 - 8.2.32 read manufactu rer / device id dual i/o (92h) the manufacturer / device id dual i/o instruction is an alternative to the read manufacturer/device id instruction that provides both the jedec assigned manufacturer id and the specific device id at 2x speed. the read manufac tur er / device id dual i/o instruction is similar to the fast read dual i/o instruction. the instruction is initiated by driving the /cs pin low and shifting the instruction code 9 2 h followed by a 24 - bit address (a23 - a0) of 000000h , 8 - bit continuous read mode bits, with the capability to input the address bits two bits per clock . after which, the manufacturer id for winbond (efh) and the device id are shifted out 2 bits per clock on the falling edge of clk with most significant bit s (msb) first as shown i n figure 3 0 . the device id values for the w25q40bw is listed in manufacturer and device identification table. if the 24 - bit address is initially set to 000001h the device id will be read first and then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving /cs high. figure 3 0 . read manufacturer / device id dual i/o diagram note: the c ontinuous read mode bits m 7 - 0 must be set to fxh to be comp atible with fast read dual i/o instruction.
w25q40bw publication release date: october 11 , 201 3 - 51 - revision f 8.2.33 read manufacturer / device id quad i/o (94h) the read manufacturer / device id quad i/o instruction is an alternative to the read manufacturer / device id instruction that provides both the jedec assigned manufa cturer id and the specific device id at 4x speed . the read manufacturer / device id quad i/o instruction is similar to the fast read quad i/o instruction. the instruction is initiated by driving the /cs pin low and shifting the instruction code 9 4 h foll owed by a 24 - bit address (a23 - a0) of 000000h , 8 - bit continuous read mode bits and then four clock dummy cycles, with the capability to input the address bits four bits per clock . after which, the manufacturer id for winbond (efh) and the device id are shif ted out four bits per clock on the falling edge of clk with most significant bit (msb) first as shown in figure 3 1 . the device id values for the w25q40bw is listed in manufacturer and device identification table. if the 24 - bit address is initially set to 0 00001h the device id will be read first and then followed by the manufacturer id. the manufacturer and device ids can be read continuously, alternating from one to the other. the instruction is completed by driving /cs high. figure 3 1 . read manufacturer / device id quad i/o diagram note: the c ontinuous read mode bits m7 - 0 must be set to fxh to be compatible with fast read quad i/o instruction.
w25q40bw - 52 - 8.2.34 read unique id number (4bh) the read unique id number instruction accesses a factory - set read - only 64 - bit nu mber that is unique to each w25q40bw device. the id number can be used in conjunction with user software methods to help prevent copying or cloning of a system. the read unique id instruction is initiated by driving the /cs pin low and shifting the instruc tion code 4bh followed by a four bytes of dummy clocks. after which, the 64 - bit id is shifted out on the falling edge of clk as shown in figure 3 2 . figure 3 2 . read unique id number instruction sequence 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 101 102 103 do 63 62 61 60 59 2 1 0 * *=msb do 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 101 102 103 do 63 62 61 60 59 2 1 0 * *=msb do
w25q40bw publication release date: october 11 , 201 3 - 53 - revision f 8.2.35 read jedec id (9fh) for compatibility reasons , the w25q40bw provides several instructions to electronically determine the identity of the device. the read jedec id instruction is compatible with the jedec standard for spi compatible serial memories that was adopted in 2003. the instruction is initiat ed by driving the /cs pin low and shifting the instruction code 9fh. the jedec assigned manufacturer id byte for winbond (efh) and two device id bytes, memory type (id15 - id8) and capacity (id7 - id0) are then shifted out on the falling edge of clk with mos t significant bit (msb) first as shown in figure 3 3 . for memory type and capacity values refer to manufacturer and device identification table. figure 3 3 . read jedec id instruction sequence
w25q40bw - 54 - 8.2.36 erase security registers (44h) the w 25q40bw offers four 256 - byte security registers which can be erased and programmed individually. these registers may be used by the system manufacturers to store security and other important information separately from the main memory array. the erase secu rity register instruction is similar to the sector erase instruction . a write enable instruction must be executed before th e device will accept the erase security register instruction (status register bit wel must equal 1). the instruction is initiated by driving the /cs pin low and shifting the instruction code 44 h followed by a 24 - bit address (a23 - a0) to erase one of the four security register s . address a23 - 16 a15 - 12 a11 - 8 a7 - 0 security register #0 * 00h 0 0 0 0 0 0 0 0 dont care security register #1 00h 0 0 0 1 0 0 0 0 dont care security register #2 00h 0 0 1 0 0 0 0 0 dont care security register #3 00h 0 0 1 1 0 0 0 0 dont care * please note that security register 0 is reserved by winbond for future use. it is recommended to use security regis ters 1 - 3 before using register 0 . the erase security register instruction sequence is shown in figure 3 4 . the /cs pin must be driven high after the eighth bit of the last byte has been l atched. if this is not done the instruction will not be executed. aft er /cs is dri ven high, the self - timed erase security register operation will commence for a time duration of t se (see ac characteristics). while the erase security register cycle is in progress, the read status register instruction may still be accessed fo r checking the status of the busy bit. the busy bit is a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is ready to accept other instructions again. after the erase security register cycle has finished the write enable l atch (wel) bit in the status register is cleared to 0. the security register lock bits (lb3 - 0) in the status register - 2 can be used to otp protect the security registers. once a lock bit is set to 1, the corresponding security register will be permanently locked, erase security register instruction to that register will be ignored (see 8 .1.9 for detail descriptions). figure 3 4 . erase security registers instruction sequence instruction (44h)
w25q40bw publication release date: october 11 , 201 3 - 55 - revision f 8.2.37 program security registers (4 2h) the program security register instruction is similar to the page program instruction. it allows from one byte to 256 bytes of security register data to be programmed at previously erased (ffh) memory locations. a write enable instruction must be execut ed before the device will accept the program security register instruction (status register bit wel= 1). the instruction is initiated by driving the /cs pin low then shifting the instruction code 42h followed by a 24 - bit address (a23 - a0) and at least one data byte, into the di pin. the /cs pin must be held low for the entire length of the instruction while data is being sent to the device. address a23 - 16 a15 - 12 a11 - 8 a7 - 0 security register #0 * 00h 0 0 0 0 0 0 0 0 byte address security register #1 00h 0 0 0 1 0 0 0 0 byte address security register #2 00h 0 0 1 0 0 0 0 0 byte address security register #3 00h 0 0 1 1 0 0 0 0 byte address * please note that security register 0 is reserved by winbond for future use. it is recommended to use security regis te rs 1 - 3 before using register 0. the program security register instruction sequence is shown in figure 3 5 . the security register lock bits (lb3 - 0) in the status register - 2 can be used to otp protect the security registers. once a lock bit is set to 1, th e corresponding security register will be permanently locked, program security register instruction to that register will be ignored (see 8 .1.9 , 8 .2. 2 1 for detail descriptions). figure 3 5 . program secu rity registers instruction sequence instruction (42h)
w25q40bw - 56 - 8.2.38 read security registers (48h) the read security register instruction is similar to the fast read instruction and allows one or more data bytes to be sequentially read from one of the four security registers. the instru ction is initiated by driving the /cs pin low and then shifting the instruction code 48h followed by a 24 - bit address (a23 - a0) and eight dummy clocks into the di pin. the code and address bits are latched on the rising edge of the clk pin. after the a ddress is received, the data byte of the addressed memory location will be shifted out on the do pin at the falling edge of clk with most significant bit (msb) first. the byte address is automatically incremented to the next byte address after each byte of data is shifted out . o nce the byte address reaches the last byte of the register (byte ffh), it will reset to 00h, the first byte of the register, and continue to increment. the instruction is completed by driving /cs high. the read security register inst ruction sequence is shown in figure 3 6 . if a read security register instruction is issued while an erase, program or write cycle is in process (busy=1) the instruction is ignored and will not have any effects on the current cycle. the read security registe r instruction allows clock rates from d.c. to a maximum of f r (see ac electrical characteristics). address a23 - 16 a15 - 12 a11 - 8 a7 - 0 security register #0 * 00h 0 0 0 0 0 0 0 0 byte address security register #1 00h 0 0 0 1 0 0 0 0 byte address security re gister #2 00h 0 0 1 0 0 0 0 0 byte address security register #3 00h 0 0 1 1 0 0 0 0 byte address * please note that security register 0 is reserved by winbond for future use. it is recommended to use security registers 1 - 3 before using register 0 . figure 3 6 . read security registers instruction sequence instruction (48h) instruction (48h)
w25q40bw publication release date: october 11 , 201 3 - 57 - revision f 9. electrical character istics 9.1 absolute maximum ratings ( 1 ) parameters symbol conditions range unit supply voltage vcc C 0.6 to vcc+0.4 v voltage appli ed to any pin v io relative to ground C 0.6 to vcc +0.4 v transient voltage on any pin v iot <20ns transient relative to ground C 2.0v to vcc+2.0v v storage temperature t stg C 65 to +150 c lead temperature t lead see note ( 2 ) c electrostatic discharge vol tage v esd human body model ( 3 ) C 2000 to +2000 v notes: 1 . this device has been designed and tested for the specified operation ranges. proper operation outside of these levels is not guaranteed. exposure to absolute maximum ratings may affect device relia bility. exposure beyond absolut e maximum ratings may cause permanent damage. 2 . compliant with jedec standard j - std - 20c for small body sn - pb or pb - free (green) assembly and the european directive on restrictions on hazardous substances (rohs) 2002/95/eu. 3 . jedec std jesd22 - a114a (c1=100 pf, r1=1500 ohms, r2=500 ohms). 9.2 operating ranges parameter symbol conditions spec unit min max supply voltage (1) vcc f r = 80 mhz f r = 50 mh z ( read data 03h ) 1.65 1.95 v ambient temperature, operating t a industrial C 4 0 +85 c note: 1. vcc voltage during read can operate across the min and max range but should not exceed 10% of the programming (erase/write) voltage.
w25q40bw - 58 - 9.3 power - u p power - down timing and requirements parameter symbol spec unit min max vcc (min) to /cs low t vsl (1) 10 s time delay before write instruction t puw (1) 1 10 ms write inhibit threshold voltage v wi (1) 1 .0 1.4 v note: 1. these parameters are characterized only. figure 37a . power - up timing and voltage levels figure 37b. power - up, power - down requirement vcc tvsl read instructions allowed device is fully accessible tpuw /cs must track vcc program, erase and write instructions are ignored reset state vcc (max) vcc (min) v wi time vcc time / cs must track vcc during vcc ramp up / down / cs
w25q40bw publication release date: october 11 , 201 3 - 59 - revision f 9.4 dc electrical characteristics parameter symbol conditions spec unit min typ max input capacitance c in ( 1 ) v in = 0v ( 1 ) 6 pf output capacitance cout ( 1 ) v out = 0v ( 1 ) 8 pf inp ut leakage i li 2 a i/o leakage i lo 2 a standby current i cc 1 /cs = vcc, vin = gnd or vcc 25 50 a power - down current i cc 2 /cs = vcc, vin = gnd or vcc 5 10 a current read data / dual /quad 1mhz i cc 3 (2) c = 0.1 vcc / 0.9 vcc do = open 4 / 5 / 6 6/ 10 / 12 ma current read data / dual /quad 33 mhz i cc 3 (2) c = 0.1 vcc / 0.9 vcc do = open 6 / 8/9 9 /12/1 5 ma current read data / dual output read /quad output read 80 mhz i cc 3 (2) c = 0.1 vcc / 0.9 vcc do = open 10 / 1 0 / 12 15/ 20 / 24 ma current write s tatus register i cc 4 /cs = vcc 15 20 ma current page program i cc 5 /cs = vcc 20 25 ma current sector/block erase i cc 6 /cs = vcc 20 25 ma current chip erase i cc 7 /cs = vcc 20 25 ma input low voltage v il C 0.5 vcc x 0.3 v input high voltage v ih vcc x 0.7 vcc + 0.4 v output low voltage v ol i ol = 1 00 a 0. 2 v output high voltage v oh i oh = C 100 a vcc C 0.2 v notes: 1 . tested on sample basis and specified through design and characterization data. ta = 25 c, vcc = 1.8 v. 2 . checker board p attern.
w25q40bw - 60 - 9.5 ac measurement conditions parameter symbol spec unit min max load capacitance c l 30 pf input rise and fall times t r , t f 5 ns input pulse voltages v in 0.2 vcc to 0.8 vcc v input timing reference voltages in 0.3 vcc to 0.7 vcc v output timing reference voltages o ut 0. 5 vcc to 0. 5 vcc v note: 1. output hi - z is defined as the point where data out is no longer driven. figure 3 8 . ac measurement i/o waveform
w25q40bw publication release date: october 11 , 201 3 - 61 - revision f 9.6 ac electrical characteristics description symbol alt spec unit min typ max clock frequency for all instructions except for read data (03h) f r f c d.c. 80 mhz clock freq uency for read data instruction ( 03h ) f r d.c. 50 mhz clock high, low time for all instructions except read data (03h) t clh 1 , t c ll 1 ( 1) 6 ns clock high, low time for read data (03h) instruction t crlh , t crll ( 1) 8 ns clock rise time peak to peak t clch ( 2) 0.1 v/ns clock fall time peak to peak t chcl ( 2) 0.1 v/ns /cs active setup time relative to clk t slch t css 5 ns /cs not active hold time relative to clk t chsl 5 ns data in setup time t dvch t dsu 2 ns data in hold time t chdx t dh 5 ns /cs active hold time relative to clk t chsh 5 ns /cs not active setup time relative to clk t shch 5 ns /cs deselect ti me (for array read ? array read) t shsl 1 t csh 10 ns /cs deselect time (for erase or program ? read status registers and volatile status register write ) t shsl 2 t csh 50 ns output disable time t shqz ( 2) t dis 7 ns clock low to output valid t clqv 1 t v 1 7 ns clock low to output valid (for read id instructions) t clqv 2 t v 2 7 .5 ns output hold time t clqx t ho 0 ns /hold active setup time relative to clk t hlch 5 ns continued C next page
w25q40bw - 62 - 9.7 ac electrical characteristics ( contd) description symbol al t spec unit min typ max /hold active hold time relative to clk t chhh 5 ns /hold not active setup time relative to clk t hhch 5 ns /hold not active hold time relative to clk t chhl 5 ns /hold to output low - z t hhqx ( 2) t lz 7 ns /hold to out put high - z t hlqz ( 2) t hz 12 ns write protect setup time before /cs low t whsl ( 3 ) 20 ns write protect hold time after /cs high t shwl ( 3 ) 100 ns /cs high to power - down mode t dp ( 2) 3 s /cs high to standby mode without electronic signature read t res 1 ( 2) 3 0 s /cs high to standby mode with electronic signature read t res 2 ( 2) 30 s /cs high to next instruction after suspend t sus ( 2) 20 s write status register time t w 10 15 m s byte program time (first byte) ( 4 ) t bp1 2 0 50 s additi onal byte program time (after first byte) ( 4 ) t bp2 2.5 1 0 s page program time t pp 0. 4 0.8 m s sector erase time (4kb) t se 30 200 /400 (5) m s block erase time ( 32 kb) t be 1 120 800 m s block erase time (64kb) t be 2 150 1 ,000 m s chip erase time t c e 1 4 s notes: 1. clock high + clock low must be less than or equal to 1/f c . 2. val ue guaranteed by design and/or characterization, not 100% tested in production. 3. only applicable as a constraint for a write status register ins truction when srp[1:0]=(0,1) . 4. for multiple bytes after first byte within a page, t bpn = t bp1 + t bp2 * n (typical) and t bpn = t bp1 + t bp2 * n (max), where n = number of bytes programmed . 5. max value t se with <50k cycles is 200ms and >50k & <100k cycles is 400ms.
w25q40bw publication release date: october 11 , 201 3 - 63 - revision f 9.8 serial output timing 9.9 serial input timing 9.10 /hold timing 9.11 /wp timing /cs clk io output tclqx tclqv tclqx tclqv tshqz tcll lsb out tclh msb out /cs clk io input tchsl msb in tslch tdvch tchdx tshch tchsh tclch tchcl lsb in tshsl /cs clk io output /hold tchhl thlch tchhh thhch thlqz thhqx io input /cs clk /wp twhsl tshwl io input write status register is allowed write status register is not allowed
w25q40bw - 64 - 10. package spec ification 10.1 8 - pin soic 150 - mil (package code sn) symbol millimeters inches min max min max a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 c 0.19 0.25 0.008 0.010 e (3) 3.80 4.00 0.150 0.157 d (3) 4.80 5.00 0.188 0.196 e (2) 1.27 bsc 0.050 bsc h e 5.80 6.20 0.228 0.244 y (4) --- 0.10 --- 0.004 l 0.40 1.27 0.016 0.050 0 10 0 10 notes: 1. controlling dimensions: millimeters , unless otherwise specified. 2. bsc = basic lead spacing between centers. 3. dimensions d and e do not include mold flash protrusions and should be measured from the bottom of the pa ckage. 4 . formed leads co planar ity with respect to seating plane shall be within 0.004 inches . l c d a1 a e b seating plane y 0.25 gauge plane e h e 4 1 5 8 l c d a1 a e b b b seating plane y 0.25 gauge plane e h e e h e 4 1 5 8
w25q40bw publication release date: october 11 , 201 3 - 65 - revision f 10.2 8 - pin vsop 150 - mil (package code sv ) symbol millimeters inches min nom max min nom max a --- --- 1.00 --- --- 0.039 a1 0.05 0.10 0.1 5 0.002 0.004 0.006 a2 0.75 0 .80 0.85 0.030 0.031 0.033 q 0.19 0.20 0.21 0.007 0.008 0.008 b 0.33 --- 0.51 0.013 --- 0.020 c 0.125 bsc 0.005 bsc d 4.80 4.90 5.00 0.189 0.193 0.197 e 5.80 6.00 6.20 0.228 0.2 36 0.244 e1 3.80 3.90 4.00 0.150 0.154 0.157 e 1.27 bsc 0.050 bsc l 0.4 0 0.71 1.27 0.016 0.028 0.050 0 --- 10 0 --- 10 notes: 1. dimension d does not include mold flash, protrusions or gate burrs. mold flash, protrusions and gate burrs shall not exceed 0.15mm per side. 2. dimension e1 does not include inte r - lead flash or protrusions. inter - lead flash and protrusions shall not exceed 0.25mm per side.
w25q40bw - 66 - 10.3 8 - pin soic 208 - mil (package code ss) symbol millimeters inches min nom max min nom max a 1.75 1.95 2.16 0.069 0.077 0.085 a1 0.05 0.15 0.25 0.002 0.00 6 0.010 a2 1.70 1.80 1.91 0.067 0.071 0.075 b 0.35 0.42 0.48 0.014 0.017 0.019 c 0.19 0.20 0.25 0.007 0.008 0.010 d 5.18 5.28 5.38 0.204 0.208 0.212 d1 5.13 5.23 5.33 0.202 0.206 0.210 e 5.18 5.28 5.38 0.204 0.208 0.212 e1 5.13 5.23 5.33 0.202 0.206 0.210 e 1.27 bsc 0.050 bsc h 7.70 7.90 8.10 0.303 0.311 0.319 l 0.50 0.65 0.80 0.020 0.026 0.031 y --- --- 0.10 --- --- 0.004 0 --- 8 0 --- 8
w25q40bw publication release date: october 11 , 201 3 - 67 - revision f 10.4 8 - pad wson 6x5mm (package code zp) symbol millimeters inches min nom max min nom max a 0.70 0.75 0.80 0.02 8 0.0 30 0.031 a1 0.00 0.02 0.05 0.000 0.00 1 0.00 2 b 0.35 0.40 0.48 0.01 4 0.01 6 0.01 9 c --- 0.20 ref. --- --- 0.008 ref. --- d 5.90 6.00 6.10 0.232 0.236 0.240 d2 3.35 3.40 3.45 0.13 2 0.13 4 0.13 6 e 4.90 5.00 5.10 0.19 3 0.19 7 0.20 1 e2 4.25 4.30 4.35 0.167 0.169 0.171 e (2) 1.27 bsc . 0.050 bsc . l 0.55 0.60 0.65 0.02 2 0.02 4 0.02 6 y 0.00 --- 0.075 0.000 --- 0.00 3
w25q40bw - 68 - 8 - contact 6x5mm wson contd. symbol millimeters inches min nom max min nom max solde r pattern m 3.40 0.13 4 n 4.30 0.169 p 6.00 0.236 q 0.50 0.0 20 r 0.75 0.02 6 notes: 1. advanced packaging information; please contact winbond for the latest minimum and maximum specifications. 2. bsc = basic lead spacing between centers. 3. dimensions d and e do not include mold flash protrusions and should be measured from the bottom of the package. 4 . the metal pad area on the bottom center of the package is connected to the device ground (gnd pin). avoid placement of exposed pc b vias under the pad.
w25q40bw publication release date: october 11 , 201 3 - 69 - revision f 10.5 8 - pad uson 2x3 - mm (package code ux , w25q40bwuxig ) top view cross section view bottom view symbo l millimeter inches min typ. max min typ. max a 0. 5 0 0. 55 0. 60 0.020 0.022 0.024 a1 0.00 0.02 0.05 0.000 0.001 0.002 b 0. 20 0.25 0.30 0.00 8 0.010 0.012 c D 0. 15 ref D D 0.00 6 D d 1.90 2.00 2.10 0.075 0.079 0.083 d2 1.5 5 1.60 1. 65 0.0 61 0.063 0.06 5 e 2.90 3.00 3.10 0.114 0.118 0.122 e2 0.15 0.20 0.25 0.0 06 0. 008 0. 010 e D 0.50 D D 0.020 D l 0. 40 0.4 5 0. 5 0 0.01 6 0.01 8 0.0 20 l1 D 0.10 D D 0.004 D l3 0. 30 0.35 0.40 0.012 0.014 0.016 y 0.000 D 0.075 0.000 D 0.003 pin 1 indent d e a a1 y d2 l3 e 2 l1 e b l c
w25q40bw - 70 - 10.6 8 - pad uson 2x3 x0.6 - mm ^ 3 (package code ux , w25q40bwuxie )
w25q40bw publication release date: october 11 , 201 3 - 71 - revision f 10.7 ordering information notes: 1. t he w prefix is not included on the part marking. 2. only the 2 nd lett er is used for the part marking. wson package type zp is not used for the part marking. uson package type ux has special top marking due to size limitation. 3. standard bulk shipments are in tube (shape e). please specify alternate packing method, such as tape and reel (sh a pe t) or tray (shape s) , when placing orders. 4. for shipments wi th otp feature enabled, please contact winbond. . w ( 1 ) 25q 40b w xx ( 2 ) w = winbond 25 q = s pi flash serial flash memory with 4 kb s ectors, dual /quad i/o 40b = 4m - bit w = 1.65v to 1.95v sn = 8 - pin soic 150 - mil sv = 8 - pin vsop 150 - mil ss = 8 - pin soic 208 - mil ux = 8 - pad uson 2x3 - mm zp = 8 - pad wson 6x5 - mm i = industrial ( - 40 c to +85c) ( 3,4 ) g = green package (lead - free, rohs compliant, halogen - free (tbba), antimony - oxide - free sb 2 o 3 ) e = green package with extended pad
w25q40bw - 72 - 10.8 valid pa rt numbers and top side marking the following table provides the valid part numbers for the w25q40bw spiflash memory . please con tact winbond for specific availability by density and package type. winbond spiflash memories use an 1 2 - digit product number for ordering. however, due to limited space, the top side marking on all packages use an abbreviated 10 - digit number. package type density product number top side marking sn soic - 8 150mil 4m - bit w25q40bw snig 25q 4 0b w nig s v vsop - 8 150mil 4m - bit w25q40bw s v ig 25q 4 0b wv ig ss soic - 8 208mil 4m - bit w25q40bw s s ig 25q 4 0b w s ig zp ( 2 ) wson - 8 6x5mm 4m - bit w25q40bw zpig 25q 4 0b w ig ux ( 3 ) uson - 8 2x3 mm 4 m - bit w25q40bwux ig 4exxx 0gxxxx ux ( 3 ) uson - 8 2 x3 x0.6 (max.) mm 3 4 m - bit w25q40bwux i e 4exxx 0 e ( 4 ) xxx x no te: 1. 4 = 4mb; e = w25q xxbw series, 1.8v; 0 = standard part; g = green . 2. wson package type zp is not used in the top side marking. 3. uson package type ux has special top marking due to size limitation. 4. e is for extended pad
w25q40bw publication release date: october 11 , 201 3 - 73 - revision f 11. revision history version date pa ge description a 01 / 27 /1 1 new create preliminary b 06/13/11 5 - 6, 65, 69 - 70 added vsop - 8 package c 12/21/11 all removed p reliminary designator d 07/24/12 6 , 68 58 63 updated package diagrams added power - down requirement updated timing drawings e 0 5 / 0 2 / 13 61 update d vcc rage f 10/11/13 64 - 71 4 - 5 , 68 - 71 4 - 6 ,68 - 71 removed w25q40bwxxip added uson 2x3x0.6mm 3 package information a dded soic - 8 208mil package information trademarks winbond and s piflash are trademarks of winbond electronics corporation . all other marks are the property of their respective owner. important notice winbond products are not designed, intended, authorized or warranted for use as components in systems or equipment intended for surgical implantation, atomic energy control instrume nts, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, or for other applications intended to support or sustain life. further more, winbond products are not intended for applications wherein failure of winbond products could result or lead to a situation wherein personal injury, death or severe property or environmental damage could occur. winbond customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify winbond for any damages resulting from such improper use or sales. information in this document is provided solely in connection with winbond products. winbond reserves the right to make changes, corrections, modifications or improvements to this document and the products and services described herein at any time, without notice.

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